Hermetic surface mounted power package

ABSTRACT

A semiconductor package which includes a substrate formed from AlN and electrical terminals formed from tungsten on at least one surface of the substrate by bulk metallization to serve as electrical connection to a component within the package.

RELATED APPLICATION

This application is based on and claims benefit of U.S. ProvisionalApplication Ser. No. 60/540,221, filed Jan. 28, 2004, entitled HermeticSurface Mount Power Package with Ultra-Low Lead Resistance, to which aclaim of priority is hereby made and the disclosure of which isincorporated herein by reference.

FIELD OF INVENTION

The present invention relates to semiconductor packages and moreparticularly to high reliability semiconductor packages.

BACKGROUND OF THE INVENTION

A high reliability semiconductor package typically includes asemiconductor device which is hermetically sealed in a housing portionthereof. Typical semiconductor devices used in high reliabilitysemiconductor packages are power MOSFETs, bipolar transistors, Schottkydiodes, PN junction diodes, and IGBTs.

Hermetic surface mount packages, leadless chip carriers and ceramicleadless chip carriers (also known as LCC and CLCC respectively) haveserved as high reliability platforms for more than 20 years.

In the recent years, a vast array of electronic designs have beenintegrating new surface mount packages (also referred to as surfacemounted devices or SMDs) which have surface mountable terminals on acommon surface thereof. Such SMDs are desirable due to their smallersize and footprint, lighter weight, and excellent thermal performance.In addition, many high frequency circuit designs benefit from theinherently low inductance and low resistance of such SMDs.

The following are some more advantages of such SMDs:

-   -   1) very low profile when compared to TO- and MO-types of        packages;    -   2) light weight;    -   2) ideal for single MOSFET, IGBT and BJT die;    -   3) capable of dissipating very high power due to low thermal        resistance from junction to case and employing low electrical        resistance material for terminal design;    -   4) extremely reliable at package level and when used on CCA and        CIC type of boards;    -   5) when used as building blocks for high reliability power        modules, they can be pre-screened to give high yield at module        level.

The following are some of the disadvantages of such SNDs:

-   -   1) thermal and reliability performance are largely nullified        when they are used on organic printed circuit boards;    -   2) all connections are on the same plane which makes soldering,        cleaning and inspection difficult;    -   3) problems with testing when multiple chips are packaged (e.g.        synchronous rectifiers);    -   4) additional ceramic carriers are used to provide electrical        isolation, stress relief to the leads, which may add many        problems such as difficulty in inspection, significant increase        of thermal resistance, and more cost;    -   5) cost is about four times higher than an ordinary TO-packages        with comparable cavity size.

It is desirable to have a package which exhibits the advantages, but notthe disadvantages of the prior art SMDs.

SUMMARY OF THE INVENTION

A package according to the first embodiment of the present inventionincludes a substrate having an opening therein having a mouth at thefirst surface of the substrate and another mouth at a second opposingsurface of the substrate, a power semiconductor device disposed withinthe opening, at least one but preferably three terminals on one surfaceof the substrate, another terminal on the second opposing surface of thesubstrate hermetically closing the mouth of the opening at the secondsurface of the substrate and a cover hermetically closing the mouth ofthe opening at the first surface of the substrate.

A package according to the second embodiment of the present inventionincludes a substrate having a recess therein having a mouth at the firstsurface of the substrate, an electrically conductive plate at the bottomof the recess, a power semiconductor device disposed within the recess,at least one but preferably three terminals on one surface of thesubstrate, and a cover hermetically closing the mouth of the opening atthe first surface of the substrate.

According to one aspect of the present invention the substrate is formedfrom AlN. The use of AlN is desirable because it provides the requiredelectrical insulation, but has a higher thermal conductivity than Al₂O₃,thus allowing for higher power dissipation.

According to another aspect of the present invention, the terminals ofthe package are formed from tungsten preferably by bulk metallization oftungsten on the substrate. As a result, each terminal exhibits an Onresistance of about 2 mOhms, which is less than the On resistance of atypical semiconductor device in the package.

Other features and advantages of the present invention will becomeapparent from the following description of the invention which refers tothe accompanying drawings.

SUMMARY OF THE FIGURES

FIG. 1 shows a top plan view of a package according to the presentinvention.

FIG. 2 shows a top plan view of a package according to the presentinvention having its lid removed to illustrate its internal components.

FIG. 3 shows a bottom perspective view of a package according to thefirst variation of the present invention.

FIG. 4 shows a cross-sectional view of a package according to the firstvariation of the present invention as would be viewed along line 1-1 ofFIG. 1 in the direction of the arrows.

FIG. 5 shows a bottom plan view of a package according to the secondvariation of the present invention.

FIG. 6 shows a cross-sectional view of a package according to the secondvariation of the present invention as would be viewed along line 1-1 ofFIG. 1 in the direction of the arrows.

FIG. 7 is a perspective view of a package according to the presentinvention having its lid and its die removed.

DETAILED DESCRIPTION OF THE FIGURES

Referring first to FIG. 1, a semiconductor package according to thepresent invention includes substrate 10, and first electrical terminals12 disposed on and attached to the first major surface of substrate 10.

According to an aspect of the present invention, substrate 10 is formedfrom a thermally conductive ceramic such as AlN. Terminals 12 arepreferably made from tungsten and preferably formed by bulkmetallization of tungsten on substrate 10.

Referring next to FIG. 2, a package according to the present inventionincludes a semiconductor die 14. Semiconductor die 14 is preferably apower MOSFET, which includes gate electrode 16, source electrode 18, anddrain electrode 20 (see FIG. 4). A package according to the presentinvention may include an IGBT, or a power diode instead of a powerMOSFET without deviating from the scope and spirit of the presentinvention.

Gate electrode 16 may be electrically connected to a respective terminal12 by a wire bond 22, and source electrode 18 may be electricallyconnected to another terminal 12 by one or a plurality of source wirebonds 24.

In the preferred embodiment of the present invention, drain electrode 20of the power MOSFET is disposed opposite to its source electrode 18, andis electrically and mechanically connected to a die receiving surface 26of an electrical conductor. According to one arrangement, a jumper 28 iselectrically connected at one end thereof to a respective terminal 12 bysolder or the like, and at the other end thereof to die receivingsurface 26, also by solder or the like, whereby drain electrode 20 ofthe power MOSFET may be electrically connected to at least one terminal12.

Referring now to FIGS. 3 and 4, a package according to a first variationof the present invention includes a bottom terminal 30 disposed on thesecond, opposing surface of substrate 10.

Referring specifically to FIG. 4, substrate 10 includes opening 32,which has a mouth at the first surface of substrate 10 and a mouth atthe second surface of substrate 10. Terminal 30 is selected to have anarea that is lager than the mouth of opening 32 at the second surface ofsubstrate 10, and is attached to substrate 10 such that the mouth ofopening 32 at the second surface of substrate 10 is closed. In thepreferred embodiment of the present invention, terminal 30 is attachedto substrate 10 by brazing or the like such that a hermetic seal isobtained between terminal 30 and substrate 10. In the preferredembodiment of the present invention molybdenum or tungsten is used toform a hermetic seal 34 between terminal 30 and substrate 10.

As previously indicated, drain electrode 20 of the power MOSFET iselectrically connected by a conductive adhesive, such as solder 36 orthe like, to die receiving surface 26, which is the surface of terminal30 that is accessible through opening 32 of substrate 10.

A package according to the present invention further includes cover 38.Cover 38 is disposed over, and closes the mouth of opening 32 at thefirst surface of the substrate. In the preferred embodiment, cover 38includes enclosure 40, which is preferably formed from a low thermalexpansion alloy such as Kovar and is hermetically attached to substrate10. Furthermore, cover 38 includes lid 42, which is preferably attachedto enclosure 40 by hermetic seal 44, whereby die 14 is hermeticallysealed. Thus, a package according to the first variation of the presentinvention includes an electrical terminal 30 which is capable of servingboth as an electrical terminal and a thermal path for transmitting theheat generated by die 14 to the exterior of the package where it can bedissipated. If terminal 30 is used as an electrical terminal forconnecting to drain electrode 20 of the power MOSFET, jumper 28 may beexcluded, leaving one terminal 12 open for another use. The openterminal could then be connected to source electrode 18 by a Kelvin wireor the like and thus serve as a source sense terminal for measuring thecurrent that is traveling through source electrode 18 of the powerMOSFET.

Referring now to FIGS. 5 and 6, a package according to the secondvariation of the present invention does not include a bottom electrode.Referring specifically to FIG. 6, substrate 10 includes recess 45, anelectrically conductive body 47 is brazed to the bottom of recess 45,and drain electrode 20 of the power MOSFET is electrically andmechanically attached to die receiving surface 26 of electricallyconductive body 47 by a conductive adhesive such as solder 36 or thelike. Conductive body 47 may be formed from a highly thermallyconductive metal, such as a copper-tungsten alloy or copper-molybdenumalloy. A package according to the second invention thus includes anelectrically insulated, but thermally conductive bottom surface.

Although the present invention has been described in relation toparticular embodiments thereof, many other variations and modificationsand other uses will become apparent to those skilled in the art. It ispreferred, therefore, that the present invention be limited not by thespecific disclosure herein, but only by the appended claims.

1. A semiconductor package comprising: a substrate having a firstsurface and a second opposing surface; at least one electrical terminalon said first surface of said substrate; at least one semiconductor die,said die including at least one electrode electrically connected to saidat least one electrical terminal; and a cover disposed over said openingand enclosing said semiconductor die.
 2. A package according to claim 1,wherein said substrate includes a recess, said die being disposed withinsaid recess.
 3. A package according to claim 1, wherein said substrateincludes an opening extending from said first surface to said secondsurface, said opening including a mouth at said first surface and amouth at said second surface, wherein said mouth at said second surfaceis closed by a second electrical terminal, and wherein saidsemiconductor die is disposed on said second terminal.
 4. A packageaccording to claim 3, wherein said die includes at least anotherelectrode which is electrically and mechanically connected to saidsecond terminal by a conductive adhesive.
 5. A package according toclaim 4, wherein said conductive adhesive is solder.
 6. A packageaccording to claim 1, wherein said cover includes an enclosure and a lidattached to said enclosure.
 7. A package according to claim 6, whereinsaid lid is comprised of Kovar or Alloy
 42. 8. A package according toclaim 1, wherein said cover hermetically seals said semiconductor die.9. A package according to claim 1, wherein said substrate is comprisedof AlN.
 10. A package according to claim 1, further comprising at twomore terminals disposed on said first surface of said substrate.
 11. Apackage according to claim 1, wherein said semiconductor die is either apower MOSFET, an IGBT, or a power diode.
 12. A package according toclaim 1, wherein said at least one terminal is formed from tungsten. 13.A package according to claim 1, wherein said tungsten terminal is formedon said substrate by bulk metallization.
 14. A semiconductor packagecomprising: an AlN substrate; a terminal on a surface of said substrate;a semiconductor having at least one terminal electrically connected tosaid terminal; and a cover disposed over and hermetically enclosing saidsemiconductor die.
 15. A package according to claim 14, wherein saidsubstrate includes a recess, said semiconductor die being disposedwithin said recess.
 16. A package according to claim 14, wherein saidsubstrate includes an opening extending from said first surface to saidsecond surface, said opening including a mouth at said first surface anda mouth at said second surface, wherein said mouth at said secondsurface is closed by a second electrical terminal, and wherein saidsemiconductor die is disposed on said second terminal.
 17. A packageaccording to claim 16, wherein said die includes at least anotherelectrode which is electrically and mechanically connected to saidsecond terminal by a conductive adhesive.
 18. A package according toclaim 17, wherein said conductive adhesive is solder.
 19. A packageaccording to claim 14, wherein said cover includes an enclosure and alid attached to said enclosure.
 20. A package according to claim 19,wherein said is comprised of Kovar or Alloy
 42. 21. A package accordingto claim 14, wherein said semiconductor die is a power MOSFET having agate electrode and a source electrode on one surface thereof, andfurther comprising at two more terminals disposed on said first surfaceof said substrate, at least one of said terminals serving as a sourcesense terminal.
 22. A package according to claim 14, wherein saidsemiconductor die is either a power MOSFET, an IGBT, or a power diode.23. A package according to claim 14, wherein said terminal is formedfrom tungsten.
 24. A package according to claim 23, wherein saidtungsten terminal is formed on said substrate by bulk metallization.